The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Sep. 02, 2004
Toshinori Hirashima, Takasaki, JP;
Munehisa Kishimoto, Kamakura, JP;
Toshiyuki Hata, Maebashi, JP;
Yasushi Takahashi, Takasaki, JP;
Toshinori Hirashima, Takasaki, JP;
Munehisa Kishimoto, Kamakura, JP;
Toshiyuki Hata, Maebashi, JP;
Yasushi Takahashi, Takasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET () has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (), a plurality of outer leads (), () protruding in parallel from the same lateral surface of the resin encapsulant () and a header () bonded to a back surface of the semiconductor pellet and having a header protruding portion () protruding from a lateral surface of the resin encapsulant () opposite to the lateral surface from which the outer leads protrude, wherein the header () has an exposed surface () exposed from the resin encapsulant (); the outer leads (), () are bent; and the exposed of the outer leads (), () are provided at substantially the same height.