The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7158896 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 02, 2007

Filed:

Nov. 01, 2004
Applicants:

Bhanwar Singh, Morgan Hill, CA (US);

Srikanteswara Dakshina-murthy, Wappingers Falls, NY (US);

Khoi A. Phan, San Jose, CA (US);

Ramkumar Subramanian, Sunnyvale, CA (US);

Bharath Rangarajan, Sunnyvale, CA (US);

Iraj Emami, Austin, TX (US);

Inventors:

Bhanwar Singh, Morgan Hill, CA (US);

Srikanteswara Dakshina-Murthy, Wappingers Falls, NY (US);

Khoi A. Phan, San Jose, CA (US);

Ramkumar Subramanian, Sunnyvale, CA (US);

Bharath Rangarajan, Sunnyvale, CA (US);

Iraj Emami, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.


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