The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Dec. 30, 2002
Applicants:
Hiroshi Kato, Hyogo, JP;
Shigehiro Kuge, Hyogo, JP;
Hideyuki Noda, Hyogo, JP;
Fukashi Morishita, Hyogo, JP;
Shuichi Ueno, Hyogo, JP;
Inventors:
Hiroshi Kato, Hyogo, JP;
Shigehiro Kuge, Hyogo, JP;
Hideyuki Noda, Hyogo, JP;
Fukashi Morishita, Hyogo, JP;
Shuichi Ueno, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory cell of a nonvolatile semiconductor memory device is formed on a silicon layer formed on a silicon substrate through an ONO film. The memory cell has a source region and a drain region formed in the silicon layer, an ONO film and a gate electrode. The ONO film and the ONO film include nitride films having charge trap parts trapping charges.