The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Nov. 09, 2004
Franz Hofmann, Munich, DE;
Erhard Landgraf, Munich, DE;
Wolfgang Rosner, Ottobrunn, DE;
Michael Specht, Munich, DE;
Martin Staedele, Ottobrunn, DE;
Franz Hofmann, Munich, DE;
Erhard Landgraf, Munich, DE;
Wolfgang Rosner, Ottobrunn, DE;
Michael Specht, Munich, DE;
Martin Staedele, Ottobrunn, DE;
Infineon Technologies AG, Munich, DE;
Abstract
In a semiconductor memory, a plurality of FinFET arrangements with trapping layers or floating gate electrodes as storage mediums are present on respective top sides of fins made from semiconductor material. The material of the gate electrodes is also present on two side walls of the fins, in order to form side wall transistors, and between the gate electrodes forms parts of a word line belonging to the corresponding fin.