The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Sep. 02, 2003
Thomas Hecht, Dresden, DE;
Uwe Schroeder, Dresden, DE;
Harald Seidl, Feldkirchen, DE;
Martin Gutsche, Dorfen, DE;
Stefan Jakschik, Dresden, DE;
Stephan Kudelka, Ottendorf-Okrilla, DE;
Albert Birner, Dresden, DE;
Thomas Hecht, Dresden, DE;
Uwe Schroeder, Dresden, DE;
Harald Seidl, Feldkirchen, DE;
Martin Gutsche, Dorfen, DE;
Stefan Jakschik, Dresden, DE;
Stephan Kudelka, Ottendorf-Okrilla, DE;
Albert Birner, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A dielectric barrier layer composed of a metal oxide is applied in thin layers with a thickness of less than 20 nanometers in the course of processing semiconductor devices by sequential gas phase deposition or molecular beam epitaxy in molecular individual layers on differently structured base substrates. The method allows, inter alias, effective conductive diffusion barriers to be formed from a dielectric material, an optimization of the layer thickness of the barrier layer, an increase in the temperature budget for subsequent process steps, and a reduction in the effort for removing the temporary barrier layers.