The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
May. 20, 2004
Applicants:
Chung-long Cheng, Hsin-Chu, TW;
Kong-beng Thei, Po-Sham Village, Hsin-Chu Country, TW;
Jung-hui Kao, Hsin-Chu, TW;
Inventors:
Chung-Long Cheng, Hsin-Chu, TW;
Kong-Beng Thei, Po-Sham Village, Hsin-Chu Country, TW;
Jung-Hui Kao, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for cleaning and forming an oxide film on a surface, particularly a silicon surface. The surface is initially cleaned and then exposed to ozone vapor, which forms the oxide film on the surface. The method is particularly useful for forming a pre-liner oxide film on trench surfaces in the fabrication of STI (shallow trench isolation) structures.