The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Jul. 07, 2004
Victor LU, Santa Cruz, CA (US);
Lei Jin, San Jose, CA (US);
Arlene J. Suedmeyer, San Jose, CA (US);
Denis H. Endisch, Cupertino, CA (US);
Paul G. Apen, San Francisco, CA (US);
Brian J. Daniels, La Honda, CA (US);
Deling Zhou, Sunnyvale, CA (US);
Ananth Naman, San Jose, CA (US);
Victor Lu, Santa Cruz, CA (US);
Lei Jin, San Jose, CA (US);
Arlene J. Suedmeyer, San Jose, CA (US);
Denis H. Endisch, Cupertino, CA (US);
Paul G. Apen, San Francisco, CA (US);
Brian J. Daniels, La Honda, CA (US);
Deling Zhou, Sunnyvale, CA (US);
Ananth Naman, San Jose, CA (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.