The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2006

Filed:

Mar. 24, 2004
Applicants:

Ervin T. Hill, Los Lunas, NM (US);

Oleh P. Karpenko, San Jose, CA (US);

Gordon T. Mcgarvey, Sunnyvale, CA (US);

Linda N. Marquez, Fremont, CA (US);

Inventors:

Ervin T. Hill, Los Lunas, NM (US);

Oleh P. Karpenko, San Jose, CA (US);

Gordon T. McGarvey, Sunnyvale, CA (US);

Linda N. Marquez, Fremont, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; patterning the ARC layer; etching the hardmask layer using the patterned ARC layer as a mask; and etching the thin film stack using the hardmask layer as a mask.


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