The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Aug. 12, 2004
James B. Friedmann, Dallas, TX (US);
Kaneez E-shaher Banu, Dallas, TX (US);
Yuqing Xu, Plano, TX (US);
Jeffrey G. Loewecke, Wylie, TX (US);
James D. Vaughan, Blue Ridge, TX (US);
James B. Friedmann, Dallas, TX (US);
Kaneez E-shaher Banu, Dallas, TX (US);
Yuqing Xu, Plano, TX (US);
Jeffrey G. Loewecke, Wylie, TX (US);
James D. Vaughan, Blue Ridge, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing semiconductor devices, a method for manufacturing an integrated circuit, and a method for improving a drive current for semiconductor devices on a wafer-by-wafer basis. The method for manufacturing semiconductor devices, among other elements, includes patterning gate structures on a substrate (), each of the gate structures having a profile associated therewith, and obtaining information representative of the profiles of the gate structures (). In accordance with the present invention the information may then be fed forward to alter a manufacturing parameter associated with a drive current of the semiconductor devices ().