The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2006
Filed:
Apr. 16, 2002
Applicants:
Makoto Koshimizu, Takasaki, JP;
Yasuaki Kagotoshi, Takasaki, JP;
Nobuo Machida, Takasaki, JP;
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
A sidewall-insulation filmis provided on a side surface of a first opening portionformed in a base extraction electrodeB of a hetero-junction bipolar transistor, and a portion of the sidewall-insulation filmextends so as to protrude from a surface opposite to a semiconductor substratetoward a main surface of the semiconductor substratein the base extraction electrodeB, and protruded length thereof is set to be equal to or smaller than one half of thickness of the insulation filminterposed between the main surface of the semiconductor substrateand a lower surface of the base extraction electrodeB.