The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2006
Filed:
Jan. 06, 2005
Applicants:
Kiyonori Oyu, Tokyo, JP;
Kensuke Okonogi, Tokyo, JP;
Koji Hamada, Tokyo, JP;
Inventors:
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a DRAM device includes a hydrogenating step conducted to source/drain diffused regions in a hydrogen ambient at a substrate temperature not lower than 350 degrees C., and a dehydrogenating step in an inactive gas ambient at a substrate temperature of lower than 350 degrees C., before a packaging step. If a defective cell having a lower refreshing time is found in the test before the packaging step, the defective cell is replaced by a redundant cell. The resultant DRAM has a lower degradation in the refreshing characteristic after the packaging step.