The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Feb. 24, 2004
Stephen L. Brown, Carmel, NY (US);
Arunava Gupta, Tuscaloosa, AL (US);
Ulrich Klostermann, Fontainebleau, FR;
Stuart Stephen Papworth Parkin, San Jose, CA (US);
Wolfgang Raberg, Fontainebleau, FR;
Mahesh Samant, San Jose, CA (US);
Stephen L. Brown, Carmel, NY (US);
Arunava Gupta, Tuscaloosa, AL (US);
Ulrich Klostermann, Fontainebleau, FR;
Stuart Stephen Papworth Parkin, San Jose, CA (US);
Wolfgang Raberg, Fontainebleau, FR;
Mahesh Samant, San Jose, CA (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.