The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Oct. 03, 2002
Yasuhito Yoneta, Hamamatsu, JP;
Hiroshi Akahori, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
Hamamatsu Photonics K.K., Shizuoka, JP;
Abstract
A semiconductor energy detector includes a semiconductor substrate comprised of a semiconductor of a first conductivity type, into which an energy ray of a predetermined wavelength range is incident from an incident surface thereof. A semiconductor energy detector includes a plurality of diffusion regions of a second conductivity type comprised of a semiconductor of a second conductivity type and a diffusion region of the first conductivity type comprised of a semiconductor of the first conductivity type higher in impurity concentration than the semiconductor substrate. The diffusion regions of a second conductivity type and the diffusion region of the first conductivity type are provided on a surface opposite to the incident surface of said semiconductor substrate. Each first conductivity type semiconductor substrate side of pn junctions, formed at the area of interface between the semiconductor substrate and each of the diffusion regions of the second conductivity type, is commonly connected.