The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Jul. 16, 2003
Aaditya Mahajan, Addison, TX (US);
Edward A. Beam, Iii, Plano, TX (US);
Jose L. Jiminez, Dallas, TX (US);
Andrew A. Ketterson, Dallas, TX (US);
Aaditya Mahajan, Addison, TX (US);
Edward A. Beam, III, Plano, TX (US);
Jose L. Jiminez, Dallas, TX (US);
Andrew A. Ketterson, Dallas, TX (US);
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Abstract
A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.