The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Nov. 15, 2005
Saysamone Pittikoun, Hsinchu County, TW;
Saysamone Pittikoun, Hsinchu County, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method of fabricating a non-volatile memory is described. A substrate having a memory cell region and a peripheral circuit region is provided. A plurality of first stacked gate structures is formed on the memory cell region and a stacked structure is formed on the peripheral circuit region. A conductive layer is formed on the substrate to form a plurality of gates between the first stacked gate structures, thereby forming a memory cell row. A plurality of conductive spacers is formed on the sidewalls of the memory cell row and the stacked structure. A patterned mask layer is formed on the substrate to cover at least the memory cell row and the conductive spacers. The stacked structure is patterned to form a plurality of second stacked gate structures on the peripheral circuit region.