The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2006

Filed:

Aug. 19, 2004
Applicants:

Frank Gonzalez, Mesa, AZ (US);

Emil Kneer, Mesa, AZ (US);

Michelle Elderkin, Coventry, RI (US);

Vince Leon, Scottsdale, AZ (US);

Inventors:

Frank Gonzalez, Mesa, AZ (US);

Emil Kneer, Mesa, AZ (US);

Michelle Elderkin, Coventry, RI (US);

Vince Leon, Scottsdale, AZ (US);

Assignee:

Arch Specialty Chemicals, Inc., Norwalk, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.


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