The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Jan. 25, 2005
Tetsuya Kawashima, Hitachi, JP;
Akira Mishima, Mito, JP;
Tetsuya Kawashima, Hitachi, JP;
Akira Mishima, Mito, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In the semiconductor device, a control power MOSFET chipis disposed on the input-side plate-like lead, and the drain terminal DTis formed on the rear surface of the chip, and the source terminal STand gate terminal GTare formed on the principal surface of the chip, and the source terminal STis connected to the plate-like lead for source. Furthermore, a synchronous power MOSFET chipis disposed on the output-side plate-like lead, and the drain terminal DTis formed on the rear surface of the chipand the output-side plate-like leadis connected to the drain terminal DT. Furthermore, source terminal STand gate terminal GTare formed on the principal surface of the synchronous power MOSFET chip, and the source terminal STis connected to the plate-like lead for source. The plate-like leads for sourceandare exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM