The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Apr. 06, 2005
Applicants:
Yinan Chen, Taipei, TW;
Jeng-ping Lin, Dayuan Township, Taoyuan County, TW;
Feng-chuan Lin, Kaohsiung, TW;
Inventors:
Yinan Chen, Taipei, TW;
Jeng-Ping Lin, Dayuan Township, Taoyuan County, TW;
Feng-Chuan Lin, Kaohsiung, TW;
Assignee:
Nan Ya Technology Corporation, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.