The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Sep. 22, 2004
Kwang-bok Kim, Incheon Metropolitan, KR;
Jae-kwang Choi, Suwon-si, KR;
Yong-sun Ko, Suwon-si, KR;
Chang-ki Hong, Seongnam-si, KR;
Kyung-hyun Kim, Seoul, KR;
Jae-dong Lee, Suwon-si, KR;
Kwang-Bok Kim, Incheon Metropolitan, KR;
Jae-Kwang Choi, Suwon-si, KR;
Yong-Sun Ko, Suwon-si, KR;
Chang-Ki Hong, Seongnam-si, KR;
Kyung-Hyun Kim, Seoul, KR;
Jae-Dong Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
For planarizing an IC (integrate circuit) material, a first slurry is dispensed for a first planarization of the IC material using the first slurry, and a second slurry is dispensed for a second planarization of the IC material using the second slurry. The first and second slurries are different. For example, the first slurry is silica based for faster planarization during the first planarization. Thereafter, the second planarization is performed with the second slurry that is ceria based with higher planarity for attaining sufficient planarization of the IC material.