The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Jun. 02, 2003
David P. Bour, Cupertino, CA (US);
Ashish Tandon, Sunnyvale, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Chaokun Lin, Fremont, CA (US);
David P. Bour, Cupertino, CA (US);
Ashish Tandon, Sunnyvale, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Chaokun Lin, Fremont, CA (US);
Avago Technologies Fiber IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.