The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Feb. 17, 2004
Deok Hyung Lee, Kyunggi-Do, KR;
Byeong Chan Lee, Kyunggi-do, KR;
IN Soo Jung, Kyunggi-do, KR;
Yong Hoon Son, Kyunggi-do, KR;
Siyoung Choi, Kyunggi-do, KR;
Taek Jung Kim, Kyunggi-do, KR;
Deok Hyung Lee, Kyunggi-Do, KR;
Byeong Chan Lee, Kyunggi-do, KR;
In Soo Jung, Kyunggi-do, KR;
Yong Hoon Son, Kyunggi-do, KR;
Siyoung Choi, Kyunggi-do, KR;
Taek Jung Kim, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produce a wider base portion. The disclosed semiconductor fin construction will also typically include a horizontal step region at the interface between the upper region and the lower region. Also disclosed are a series of methods of manufacturing semiconductor devices incorporating semiconductor fins having this dual construction and incorporating various combinations of insulating materials such as silicon dioxide and/or silicon nitride for forming shallow trench isolation (STI) structures between adjacent semiconductor fins.