The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Aug. 26, 2003
Sang-hyeob Lee, Fremont, CA (US);
Karl B. Levy, Los Altos, CA (US);
Aaron R. Fellis, San Jose, CA (US);
Panya Wongsenakhum, Fremont, CA (US);
Juwen Gao, Fremont, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Kaihan A. Ashtiani, Sunnyvale, CA (US);
Junghwan Sung, Los Altos, CA (US);
Lana Hiului Chan, Santa Clara, CA (US);
Sang-Hyeob Lee, Fremont, CA (US);
Karl B. Levy, Los Altos, CA (US);
Aaron R. Fellis, San Jose, CA (US);
Panya Wongsenakhum, Fremont, CA (US);
Juwen Gao, Fremont, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Kaihan A. Ashtiani, Sunnyvale, CA (US);
Junghwan Sung, Los Altos, CA (US);
Lana Hiului Chan, Santa Clara, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile