The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Feb. 07, 2002
Satoru Yamada, Ome, JP;
Hiroyuki Enomoto, Musashino, JP;
Nobuya Saito, Sakado, JP;
Tsuyoshi Kawagoe, Fussa, JP;
Hisaomi Yamashita, Higashikunisaki, JP;
Satoru Yamada, Ome, JP;
Hiroyuki Enomoto, Musashino, JP;
Nobuya Saito, Sakado, JP;
Tsuyoshi Kawagoe, Fussa, JP;
Hisaomi Yamashita, Higashikunisaki, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A sidewall insulating film () made of a silicon oxide film is formed on the sidewall of a gate electrode () (word line) with an aim to reduce the capacitance to the word line serving as the major component of the bit line capacitance. Also, when openings for connecting the bit lines are formed above the spaces of the gate electrodes () (word lines) by the dry etching of a silicon oxide film () above contact holes (), a silicon nitride film () to be an etching stopper is provided below the silicon oxide film () so as to reduce the amount of the bottom surface of the opening receded below the upper surface of a cap insulating film ().