The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2006

Filed:

Jan. 06, 2004
Applicants:

Yaowen Chang, Hsinchu, TW;

Taocheng LU, Hsinchu, TW;

Inventors:

Yaowen Chang, Hsinchu, TW;

Taocheng Lu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for dynamically varying a threshold voltage of a complimentary metal oxide semiconductor (CMOS) includes providing a substrate pickup formed a semiconductor material type which is complimentary to the semiconductor material type of a well thereof, so as to define a diode. The diode is at least partially turned on, so as to increase the potential of a substrate of the complimentary metal oxide semiconductor and thus reduce the turn-on threshold voltage thereof. The turn-off threshold voltage is approximately unchanged.


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