The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Aug. 10, 2004
Young-ki Ha, Gyeonggi-do, KR;
Jang-eun Lee, Gyeonggi-do, KR;
Hyun-jo Kim, Gyeonggi-do, KR;
Se-chung OH, Daejeon, KR;
Jun-soo Bae, Gyeonggi-do, KR;
In-gyu Baek, Seoul, KR;
Young-Ki Ha, Gyeonggi-do, KR;
Jang-Eun Lee, Gyeonggi-do, KR;
Hyun-Jo Kim, Gyeonggi-do, KR;
Se-Chung Oh, Daejeon, KR;
Jun-Soo Bae, Gyeonggi-do, KR;
In-Gyu Baek, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
There are provided a magnetic tunnel junction structure and a method of fabricating the same. The magnetic tunnel junction structure includes a lower electrode, a lower magnetic layer pattern and a tunnel layer pattern, which are sequentially formed on the lower electrode. The magnetic tunnel junction structure further includes an upper magnetic layer pattern, a buffer layer pattern, and an upper electrode, which are sequentially formed on a portion of the tunnel layer pattern. The sidewall of the upper magnetic layer pattern is surrounded by an oxidized upper magnetic layer, and the sidewall of the buffer layer pattern is surrounded by an oxidized buffer layer. The depletion of the upper magnetic layer pattern and the lower magnetic layer pattern in the magnetic tunnel junction region can be prevented by the oxidized buffer layer.