The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Jun. 04, 2002
Tomio Iwasaki, Tsuchiura, JP;
Hiroshi Moriya, Tsuchiura, JP;
Hideo Miura, Tsuchiura, JP;
Shuji Ikeda, Kodaira, JP;
Tomio Iwasaki, Tsuchiura, JP;
Hiroshi Moriya, Tsuchiura, JP;
Hideo Miura, Tsuchiura, JP;
Shuji Ikeda, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.