The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Nov. 14, 2003
Myung Kwan Ryu, Seoul, KR;
Ho Nyeon Lee, Kyoungki-do, KR;
Jae Chul Park, Seoul, KR;
Eok Su Kim, Seoul, KR;
Myung Kwan Ryu, Seoul, KR;
Ho Nyeon Lee, Kyoungki-do, KR;
Jae Chul Park, Seoul, KR;
Eok Su Kim, Seoul, KR;
Boe Hydis Technology Co., Ltd., Kyoungki-do, KR;
Abstract
The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile