The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Jun. 22, 2004
Makoto Miyoshi, Inazawa, JP;
Masahiro Sakai, Nagoya, JP;
Mitsuhiro Tanaka, Handa, JP;
Takashi Egawa, Nagoya, JP;
Hiroyasu Ishikawa, Nagoya, JP;
Makoto Miyoshi, Inazawa, JP;
Masahiro Sakai, Nagoya, JP;
Mitsuhiro Tanaka, Handa, JP;
Takashi Egawa, Nagoya, JP;
Hiroyasu Ishikawa, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.