The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
May. 28, 2003
Li-jui Chen, Hsinchu, TW;
Chih-ming KE, Hsin-Chu, TW;
Bang-ching Ho, Hsinchu, TW;
Jen-chieh Shih, Yungkang, TW;
Tsai-sheng Gau, Hsinchu, TW;
Li-Jui Chen, Hsinchu, TW;
Chih-Ming Ke, Hsin-Chu, TW;
Bang-Ching Ho, Hsinchu, TW;
Jen-Chieh Shih, Yungkang, TW;
Tsai-Sheng Gau, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.