The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Jun. 01, 2001
Michael Heuken, Aachen, DE;
Gert Strauch, Aachen, DE;
Harry Protzmann, Aachen, DE;
Holger Jürgensen, Aachen, DE;
Oliver Schön, Herzogenrath, DE;
Dietmar Schmitz, Aachen, DE;
Michael Heuken, Aachen, DE;
Gert Strauch, Aachen, DE;
Harry Protzmann, Aachen, DE;
Holger Jürgensen, Aachen, DE;
Oliver Schön, Herzogenrath, DE;
Dietmar Schmitz, Aachen, DE;
Aixtron AG, , DE;
Abstract
What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form ABCNM, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.