The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Aug. 03, 2004
Tai Min, San Jose, CA (US);
Yimin Guo, San Jose, CA (US);
Pokang Wang, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Applied Spintronics, Inc., Milpitas, CA (US);
Abstract
An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.