The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2006

Filed:

Sep. 30, 2002
Applicants:

Koji Fukuhisa, Kanagawa, JP;

Akira Nakajima, Kanagawa, JP;

Kenji Shinohara, Kanagawa, JP;

Toshiya Watanabe, Kanagawa, JP;

Hisashi Ohsaki, Kanagawa, JP;

Tadashi Serikawa, Tokyo, JP;

Inventors:

Koji Fukuhisa, Kanagawa, JP;

Akira Nakajima, Kanagawa, JP;

Kenji Shinohara, Kanagawa, JP;

Toshiya Watanabe, Kanagawa, JP;

Hisashi Ohsaki, Kanagawa, JP;

Tadashi Serikawa, Tokyo, JP;

Assignees:

Toto Ltd., Fukuoka, JP;

The University of Tokyo, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for producing a crystalline metal oxide thin film by first depositing a substantially amorphous metal oxide film, and thereafter, as a post treatment, exposing the film to low temperature plasma in a high frequency electric field at 180° C. or less, and the crystalline metal oxide thin film produced by this method. Because the producing method according to the present invention allows a dense and homogenous crystalline metal oxide thin film to be formed onto a substrate at a low temperature without requiring active heat treatment, a metal oxide thin film having desirable characteristics can be formed without damaging the characteristics of a substrate even if the substrate has comparatively low heat resistance.


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