The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Aug. 10, 2004
Sue Ellen Crank, Coppell, TX (US);
Shirin Siddiqui, Plano, TX (US);
Deborah J. Riley, Richardson, TX (US);
Trace Quentin Hurd, Plano, TX (US);
Peijun J. Chen, Dallas, TX (US);
Sue Ellen Crank, Coppell, TX (US);
Shirin Siddiqui, Plano, TX (US);
Deborah J. Riley, Richardson, TX (US);
Trace Quentin Hurd, Plano, TX (US);
Peijun J. Chen, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of preparing a die comprises treating exposed silicon to form an oxide prior to silicide formation; and depositing metal on the oxide. The metal may comprise titanium, cobalt, nickel, platinum, palladium, tungsten, molybdenum, or combinations thereof on the oxide. The oxide may be less than or equal to about 15 angstroms thick. In various embodiments, treating exposed silicon to form an oxide comprises forming a non-thermal oxide. Treating exposed silicon to form an oxide may also comprise treating the exposed silicon with an oxidizing plasma; alternatively, treating exposed silicon to form an oxide may comprise forming a chemical oxide. In certain other embodiments, treating exposed silicon to form an oxide comprises treating exposed silicon with a solution comprising ammonium hydroxide, hydrogen peroxide, and water; hydrochloric acid, hydrogen peroxide, and water; hydrogen peroxide; ozone; ozonated deionized water; or combinations thereof.