The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2006

Filed:

May. 25, 2004
Applicants:

Tab A. Stephens, Austin, TX (US);

Chong-cheng Fu, Austin, TX (US);

Charles F. King, Austin, TX (US);

Inventors:

Tab A. Stephens, Austin, TX (US);

Chong-Cheng Fu, Austin, TX (US);

Charles F. King, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A patterning method allows for separate transfer of a complementary reticle set. In one embodiment, for example, the method includes etching a phase shift mask (PSM), then etching a cut mask for a cPSM mask. Moreover, a decoupled complementary mask patterning transfer method includes two separate and decoupled mask patterning steps which form combined patterns through the use of partial image transfers into an intermediate hard mask prior to final wafer patterning. The intermediate and final hard mask materials are chosen to prevent image transfer into an underlying substrate or wafer prior to the final etch process.


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