The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Nov. 04, 2004
Sang-su Kim, Gyeonggi-do, KR;
In-wook Cho, Gyeonggi-do, KR;
Myeong-cheol Kim, Gyeonggi-do, KR;
Sung-woo Lee, Gyeonggi-do, KR;
Jin-hee Kim, Gyeonggi-do, KR;
Doo-youl Lee, Seoul, KR;
Sung-ho Kim, Gyeonggi-do, KR;
Sang-Su Kim, Gyeonggi-do, KR;
In-Wook Cho, Gyeonggi-do, KR;
Myeong-Cheol Kim, Gyeonggi-do, KR;
Sung-Woo Lee, Gyeonggi-do, KR;
Jin-Hee Kim, Gyeonggi-do, KR;
Doo-Youl Lee, Seoul, KR;
Sung-Ho Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.