The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Apr. 28, 2005
Koji Uematsu, Itami, JP;
Masaki Ueno, Itami, JP;
Ryu Hirota, Itami, JP;
Hideaki Nakahata, Itami, JP;
Manabu Okui, Itami, JP;
Koji Uematsu, Itami, JP;
Masaki Ueno, Itami, JP;
Ryu Hirota, Itami, JP;
Hideaki Nakahata, Itami, JP;
Manabu Okui, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device () is furnished with an n-type cladding layer (), a p-type cladding layer () provided over the n-type cladding layer (), and an active layer () composed of a nitride and provided in between the n-type cladding layer () and the p-type cladding layer (), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer () and the active layer (), and the c-axis in the active layer (), and the angle formed by an axis orthogonal to the interface between the active layer () and the p-type cladding layer (), and the c-axis in the active layer (), are each greater than zero.