The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Dec. 30, 2004
Applicants:
Kiyonori Oyu, Tokyo, JP;
Kensuke Okonogi, Tokyo, JP;
Inventors:
Kiyonori Oyu, Tokyo, JP;
Kensuke Okonogi, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a DRAM device includes the step of implanting phosphor at a specified dosage and heat treating the implanted phosphor for diffusion thereof to form source/drain regions, and implanting fluorine into the source/drain regions and heat treating the implanted fluorine for diffusion thereof. The resultant DRAM memory cell has a larger data storage capability due to lower junction leakage current caused by vacancy type defects formed in the metallurgical junction between the source/drain regions and the channel region.