The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Jul. 29, 2003
Mikio Hongo, Yokohama, JP;
Sachio Uto, Yokohama, JP;
Mineo Nomoto, Yokohama, JP;
Toshihiko Nakata, Hiratsuka, JP;
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Makoto Ohkura, Fuchu, JP;
Mikio Hongo, Yokohama, JP;
Sachio Uto, Yokohama, JP;
Mineo Nomoto, Yokohama, JP;
Toshihiko Nakata, Hiratsuka, JP;
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Makoto Ohkura, Fuchu, JP;
Hitachi Displays, Ltd., Hayano Mobara, JP;
Abstract
The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.