The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Feb. 24, 2003
Kazuki Nishijima, Aichi, JP;
Masanobu Senda, Aichi, JP;
Toshiaki Chiyo, Aichi, JP;
Jun Ito, Aichi, JP;
Naoki Shibata, Aichi, JP;
Toshimasa Hayashi, Aichi, JP;
Kazuki Nishijima, Aichi, JP;
Masanobu Senda, Aichi, JP;
Toshiaki Chiyo, Aichi, JP;
Jun Ito, Aichi, JP;
Naoki Shibata, Aichi, JP;
Toshimasa Hayashi, Aichi, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.