The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Oct. 29, 2004
Tomio Iwasaki, Tsukuba, JP;
Hiroshi Moriya, Chiyoda, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Norikatsu Takaura, Tokyo, JP;
Tomio Iwasaki, Tsukuba, JP;
Hiroshi Moriya, Chiyoda, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Norikatsu Takaura, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.