The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
May. 17, 2005
Craig T. Salling, Plano, TX (US);
Craig T. Salling, Plano, TX (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A programming voltage is applied to a first word line coupled to a control gate of a selected ferroelectric memory cell in an array of ferroelectric memory cells. A gate/source voltage equal to the programming voltage is sufficient to reverse polarity of each memory cell. A ground potential is applied to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell. A fraction of the programming voltage is applied to other word lines coupled to control gates of non-selected memory cells not associated with the first word line, other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line, and other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line.