The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
May. 28, 2001
Kenichi Takeda, Atlanta, GA (US);
Daisuke Ryuzaki, Kokubunji, JP;
Kenji Hinode, Tsukuba, JP;
Toshiyuki Mine, Fussa, JP;
Kenichi Takeda, Atlanta, GA (US);
Daisuke Ryuzaki, Kokubunji, JP;
Kenji Hinode, Tsukuba, JP;
Toshiyuki Mine, Fussa, JP;
Renesas Technology Corp., Chiyoda-ku, JP;
Abstract
A semiconductor device according to this invention comprises a substratein which semiconductor elements are formed, a first conductorat least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layercovering at least a portion of the first conductor. The first insulative diffusion barrier layeris formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)SiH(n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.