The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
May. 21, 2003
Steven T. Peake, Warrington, GB;
Philip Rutter, Stockport, GB;
Raymond J. Grover, Manchester, GB;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A trench-gate semiconductor device, for example a MOSFET or IGBT, includes a semiconductor body () having a drain region () comprising a drain drift region () and a drain contact region (). An insulated field plate () is included in the trench () between the gate () and the drain contact region (), wherein the field plate () is for connection to a bias potential greater than the gate potential and near to the bulk breakdown voltage of the drain drift region (). The field plate () causes the potential drop across the drain drift region () to be spread considerably more evenly, particularly at applied voltages greater than the bulk breakdown voltage, thereby substantially increasing the breakdown voltage of the device.