The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Dec. 09, 2002
George D. Papasouliotis, Cupertino, CA (US);
Edith Goldner, Sunnyvale, CA (US);
Vishal Gauri, San Jose, CA (US);
MD Sazzadur Rahman, South Field, MI (US);
Vikram Singh, Fremont, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
Edith Goldner, Sunnyvale, CA (US);
Vishal Gauri, San Jose, CA (US);
Md Sazzadur Rahman, South Field, MI (US);
Vikram Singh, Fremont, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.