The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Sep. 12, 2002
Applicants:
Chuck Jang, Fremont, CA (US);
Zhong Dong, Sunnyvale, CA (US);
Vei-han Chan, San Jose, CA (US);
Ching-hwa Chen, Milpitas, CA (US);
Inventors:
Chuck Jang, Fremont, CA (US);
Zhong Dong, Sunnyvale, CA (US);
Vei-Han Chan, San Jose, CA (US);
Ching-Hwa Chen, Milpitas, CA (US);
Assignee:
ProMOS Technologies, Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved reliability and longer lifetime of the memory cells fabricated according to this invention.