The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Jun. 18, 2003
George I. Bourianoff, Austin, TX (US);
Robert Lindstedt, Portland, OR (US);
Harry A. Atwater, South Pasadena, CA (US);
Maria Giorgi, Sherwood, OR (US);
Robert J. Walters, Pasadena, CA (US);
Julie D. Casperson, Santa Monica, CA (US);
Pieter G. Kik, Pasadena, CA (US);
George I. Bourianoff, Austin, TX (US);
Robert Lindstedt, Portland, OR (US);
Harry A. Atwater, South Pasadena, CA (US);
Maria Giorgi, Sherwood, OR (US);
Robert J. Walters, Pasadena, CA (US);
Julie D. Casperson, Santa Monica, CA (US);
Pieter G. Kik, Pasadena, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device. The memory device includes a substrate and an array of nanocrystals formed proximate to the substrate. The array of nanocrystals is electrically insulated to hold charge carriers therein. A presence of charge carriers within the array of nanocrystals represents a first logic state of the memory device. An absence of the charge carriers within the array of nanocrystals represents a second logic state of the memory device. The presence and the absence of the charge carriers is determinable via directing a beam of photons onto the array of nanocrystals and sensing an optical response.