The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Apr. 14, 2005
Toshiya Kotani, Sagamihara, JP;
Satoshi Tanaka, Kawasaki, JP;
Koji Hashimoto, Yokohama, JP;
Soichi Inoue, Yokohama, JP;
Ichiro Mori, Yokohama, JP;
Toshiya Kotani, Sagamihara, JP;
Satoshi Tanaka, Kawasaki, JP;
Koji Hashimoto, Yokohama, JP;
Soichi Inoue, Yokohama, JP;
Ichiro Mori, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.