The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Nov. 12, 2004
Sachiyo Ito, Yokohama, JP;
Masahiko Hasunuma, Yokohama, JP;
Sachiyo Ito, Yokohama, JP;
Masahiko Hasunuma, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device comprising a first insulating layer formed above a semiconductor substrate, and comprising a first insulating material, a second insulating material and a hole, a relative dielectric constant of the first insulating material being 3 or less, a Young's modulus of the first insulating material being 10 GPa or less, a linear expansivity of the first insulating material being greater than 30×10° C., and a linear expansivity of the second insulating material being 30×10° C.or less, and a second insulating layer formed on the first insulating layer, the second insulating layer having a groove connected to the hole, wherein a linear expansivity α of the first insulating layer within 6 μm from the hole is 30×10° C.or less, where vand αare a volume ratio and a linear expansivity of an i-th insulating material.