The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Nov. 22, 2004
Applicants:
Bang-ching Ho, Hsin-Chu, TW;
Jen-chieh Shih, Yongkang, TW;
Inventors:
Bang-Ching Ho, Hsin-Chu, TW;
Jen-Chieh Shih, Yongkang, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for performing immersion lithography on a semiconductor wafer is disclosed. The method includes positioning the semiconductor wafer beneath a lens and applying a fluid between a top surface of the semiconductor wafer and the lens. An additive can be provided to the top surface so that any droplet of the fluid that forms on the top surface of the semiconductor wafer will have a contact angle between about 40° and about 80°.