The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Sep. 18, 2001
Applicant:
Hui Wang, Fremont, CA (US);
Inventor:
Hui Wang, Fremont, CA (US);
Assignee:
ACM Research, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
In forming a layer of a semiconductor wafer, a dielectric layer is deposited on the semiconductor wafer. The dielectric layer includes material having a low dielectric constant. Recessed and non-recessed areas are formed in the dielectric layer. A metal layer is deposited on the dielectric layer to fill the recessed areas and cover the non-recessed areas. The metal layer is then electropolished to remove the metal layer covering the non-recessed areas while maintaining the metal layer in the recessed areas.